Photo-assisted remote plasma apparatus and method

ABSTRACT

The present invention provides a plasma processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of photo energy for maintaining activation of the active species during transfer from the remote plasma activation region to the processing chamber. The source of photo energy preferably includes an array of UV lamps. Additional UV lamps may also be used to further sustain active species and assist plasma processes by providing additional in-situ energy through a transparent window of the processing chamber. The system can be utilized for annealing.

FIELD OF THE INVENTION

[0001] The present invention relates to plasma-enhanced processes, moreparticularly to a photo-assisted remote plasma apparatus and method formaintaining high energy activated species for plasma-enhancedsemiconductor fabrication processes.

BACKGROUND OF THE INVENTION

[0002] “Plasma-assisted” or “plasma-enhanced” processing has manyapplications in semiconductor device fabrication. Plasma-enhancedprocessing is a technique in which a substantially ionized gas generatesactive, metastable neutral and ionic species that chemically orphysically react to deposit thin material layers on, or to etch materiallayers from, a semiconductor substrate in a reactor processing chamber.

[0003] Advanced semiconductor VLSI technologies employ plasma processingfor a number of important steps in device fabrication. For example,plasma processing permits lower processing temperatures and higherdeposition rates for growth and deposition of thin layers of insulators,semiconductors, or metals. In addition, reactive ion etching (RIE)processes in low-pressure plasmas are used for anisotropic patterning ofthe submicron features in VLSI device structures.

[0004] Plasma-enhanced processing may use remotely-generated orlocally-generated plasmas. A remote plasma is a plasma that is generatedexternal to the reactor's semiconductor processing chamber. The plasmais guided into the processing chamber through a conduit from a remoteplasma source, which is separated from the processing chamber where theplasma interacts with the semiconductor wafer for the desiredfabrication process. An in-situ or localized plasma is a plasma that isgenerated within the semiconductor processing chamber where it interactswith the semiconductor wafer.

[0005] Conventional plasma processing equipment for etch and depositionapplications usually employ a 13.56 MHz power source, a 2.5 GHzmicrowave source, or a combination of these energy sources forgenerating a plasma (glow discharge) from plasma feed gas. In typicalsystems, a plasma-generating radio-frequency power source connectselectrically to an electrically conducting wafer holding device known asa wafer chuck. A radio-frequency energy source causes the chuck andwafer to produce a locally-generated radio-frequency plasma in theprocessing chamber with the semiconductor wafer. These systems typicallyinclude a showerhead assembly for injecting plasma-generating feed gasinto the processing chamber.

[0006] This is known as a parallel-plate configuration, due to theparallel surfaces of the chuck and showerhead. Still otherconfigurations use a combination of local and remote plasmas.

[0007] In all of these known configurations, constraints exist whichlimit plasma process flexibility and capabilities. In localized plasmaenhanced chemical vapor deposition (PECVD), for example, parent gasmolecules are dissociated into precursor atoms and radicals which candeposit on substrates. The plasma supplies energy to break chemicalbonds in the parent molecules that would only be broken by thermaldecomposition if the plasma were not present. Parent moleculedissociation is accomplished in the plasma through collisions withelectrons, ions, photons, and excited neutral species. Unfortunately,the precursor species are also subject to the same active environmentwhich dissociated the parent molecules. This can lead to furtherdissociation or reaction of gas phase species to form more complicatedradicals before the radicals can condense on the substrate. There isthus a wide spectrum of precursor species incident on the growing film.

[0008] A further complication of localized PECVD is that the substrateis immersed in the plasma region. This results in a large flux ofcharged species incident on the substrate during film deposition. Thiscan lead to ion implantation, energetic neutral embedment, sputtering,and associated damage.

[0009] In addition, localized PECVD tends to deposit film in a verydirectional manner. This limits step coverage and conformality,resulting in thicker films in certain areas and thinner films in others,particularly at the bottom and along the bottom portions of trenches andcontact vias. Thus, there are three major problems associated withconventional in-situ PECVD: adequate control over incident gas phasespecies, ion damage as a result of the substrate being immersed in theplasma region, and limited step coverage and conformality.

[0010] The use of a remote plasma system for remote plasma enhancedchemical vapor deposition (RPECVD) can help to alleviate all of theseproblems, but raises additional limitations relating to the transfer ofactive plasma species from the remote source to the semiconductorprocessing chamber. The lifetime of metastable oxygen, for example,typically allows pathlengths of 1-2 meters in the transfer conduit froma remote plasma source to the semiconductor processing chamber. Thepathlength of a typical metastable excited noble gas species, e.g., He*,is only 5-30 cm. Nitrogen and various other activated species importantto plasma-enhanced processing have similarly short, or even shorter,pathlengths. Therefore, an important limitation of remote plasmareactors is that desired activated species often cannot reach thesemiconductor substrate in a sufficiently activated state and adequateconcentration for efficient plasma-enhanced processing.

[0011] Anneals are used to heat dielectrics to alter the surfacecharacteristics of a dielectric film, as well as for other reasons, insemiconductor processing. Conventional anneals are performed using rapidthermal techniques or in furnaces at elevated temperatures (specific forannealing purposes) and ambient. Anneals are used either to heal orchange dielectric surfaces. Such annealing processes are being performedusing remote plasma or direct plasma because they offer the advantage oflower DT. When performed utilizing remote plasma, similar problems arefound as described above in relation to other plasma processingtechniques. When direct plasma is utilized, damage may be caused to gateoxides or dielectrics.

[0012] What is needed is a new and improved plasma-enhanced apparatusand method which overcomes the problems in the prior art techniques,including inadequacy of the control over incident gas phase species, iondamage to the substrate, limited step coverage/conformality, and thelimited lifetime and diffusion length of the active species generated byremote plasma sources. A remote plasma anneal process would be desirableto lower DT and produce more effective anneals.

SUMMARY OF THE INVENTION

[0013] The present invention provides a plasma processing apparatus andmethod including a remote plasma activation region for formation ofactive gas species, and a transparent transfer tube coupled between theremote activation region and a semiconductor processing chamber. Asource of photo energy is provided to sustain activation of the activespecies during transfer from the remote plasma activation region to theprocessing chamber. The source of photo energy preferably includes anarray of UV lamps. Additional UV lamps or other photo energy sources mayalso be used to further sustain active species and assist plasmaprocesses by providing additional energy through a transparent wall ofthe processing chamber. The apparatus of the invention may be used forany plasma-enhanced processing technique, including, but not limited to,RPECVD and RIE, and is particularly well-suited for any techniques usingplasma activated species having relatively short lifetimes insemiconductor fabrication or other plasma-assisted processes. Theprocess of the invention is also effective in producing superioranneals.

BRIEF DESCRIPTION OF THE DRAWING

[0014]FIG. 1 is a block schematic diagram of one embodiment of thereactor system, including remote plasma generation and photo-assistequipment, of the subject process and apparatus of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] In the following detailed description which follows, reference ismade to various specific embodiments in which the invention may bepracticed. These embodiments are described in sufficient detail toenable those skilled in the art to practice the invention, and it is tobe understood that other embodiments may be utilized and that specificequipment, processing steps, energy sources, and other changes may bemade without departing from the spirit and scope of the presentinvention.

[0016] The terms “wafer” or “substrate” as used herein include anysemiconductor-based or other structure having an exposed surface inwhich to form a structure using the apparatus or method of thisinvention. Wafer and substrate are to be understood as includingsilicon-on-insulator, doped and undoped semiconductors, epitaxial layersof silicon supported by a base semiconductor foundation, and othersemiconductor structures. Furthermore, when reference is made to a waferor substrate in the following description, previous process steps mayhave been utilized to form active devices, regions or junctions in thebase semiconductor structure or foundation.

[0017] The reactor apparatus of the invention as discussed belowincludes a remote region of plasma generation for activation of a gas ormixture of gases, and photo-assisted maintenance of activation from theremote region of activation to the processing chamber where filmdeposition, annealing, etching or other fabrication steps takes place ona substrate within the processing chamber. Applications of thephoto-assisted remote plasma apparatus and method of the invention forplasma-enhanced processing in semiconductor device manufacturing includeremote plasma-enhanced chemical-vapor deposition (RPECVD) ofdielectrics, silicon, tungsten nitride (WN_(X)), titanium, aluminum,copper, and other materials; high-rate reactive-ion etching (RIE) of,e.g., thin films of polysilicon, metal, oxides, nitrides, andpolyimides; planarized inter-level dielectric formation, includingprocedures such as biased sputtering; low-temperature epitaxialsemiconductor growth processes; and other applications and methods whichwill be apparent to those of skill in the art given the teachingsherein. Once deposited, these materials, particularly dielectrics, canalso be annealed using the apparatus.

[0018]FIG. 1 shows a block diagram of a remote plasma photo-assistedprocessing apparatus according to the present invention. A feed gasstream (single gas, vapor, or mixture) enters remote plasma generationregion 8 at plasma feed gas injector port 9. Within the remote plasmageneration region 8, the plasma feed gas has its internal energyactivated, i.e., increased, in one or more of a variety of differentways. For example, one or more components of the feed gas may beionized; one or more components of the feed gas may be dissociated intomore reactive species; or the internal energy of the feed gas may beincreased without ionization. This can be accomplished by equipmentinternal to the remote plasma generation region 8 by, e.g., heaters,catalytic surfaces, or electron or ion bombardment sources, or byequipment external to the remote plasma generation region 8 by, e.g.,microwave sources, radio frequency sources, or heaters. Whatever theplasma feed gas, the method for activation, or the active species formedin the remote plasma generation region 8, energy is coupled into one ormore gases, and that energy is sustained by a photo energy source 7 asthe active species are transferred through transparent conduit 10 tocontribute to subsequent reactions in the processing chamber 11.

[0019] In the remote plasma generation region 8, only gases from theplasma feed gas injector 9 are present. Other gases that may be presentin other regions of the apparatus cannot reach the remote plasmageneration region 8 by diffusion or other processes that would allowsuch gases to enter through the exit 11 of remote plasma generationregion 8 into transparent conduit 10. In the flow system shown in FIG.1, the physical separation of the various regions of the reactor,coupled with the flow velocity of the gas stream, which of coursedepends on the selection of process parameters in those regions,prevents back-diffusion of gases into remote plasma generation region 8.

[0020] Referring again to FIG. 1, a microwave generator 18, controlledby a tuner and power meter (not shown), adjacent to the remote plasmageneration region 8 provides power to create a “plasma” (glow discharge)of the plasma feed gas in remote plasma generation region 8. A purenoble gas plasma feed gas, nitrogen or hydrogen, are typically used forRPECVD, but the apparatus of the invention is not limited to anyparticular gas or gas mixtures. The plasma feed gas may also contain,for example, WF₆. The plasma environment in the remote plasma generationregion 8 typically contains many active species, even with a simple feedgas like helium. The active species produced in remote plasma generationregion 8 include ions, electrons, and a host of excited species withdifferent lifetimes.

[0021] A photo energy source 7 is positioned so as to direct photoenergy through transparent conduit 10 to the active species generated inremote plasma region 8 as the active species flow through conduit 10toward processing chamber 12. Photo energy source 7 can include anysource of photo energy capable of sustaining the activity of one or moreactivated plasma species within conduit 10. The preferred sources ofphoto energy are laser energy and UV lamps, most preferably, an array ofUV lamps, but other sources may also be used so long as one or more ofthe active species generated in remote plasma generation region 8 have ahigher energy level when they reach processing chamber 11 than suchspecies would have in the absence of the photo energy transferred fromphoto energy source 7.

[0022] The flow through the remote generation region 8 carries thespecies downstream through transparent conduit 10 to the plasmashowerhead 13 and substrate 14 mounted in a deposition region downstreamof the showerhead 13 in processing chamber 12. Transparent conduit 10provides a sealed pathway through which the activated species fromremote plasma generation region 8 flow to enter processing chamber 12.Conduit 10 can be manufactured from quartz, sapphire or any transparentmaterial that is inert or substantially non-reactive with respect to theactive species. The preferred materials for the walls of conduit 10 aretransparent quartz, non-reactive polymers, or a combination of quartzand non-reactive polymers provided in one or more concentric layers tomake up the wall of the transfer tube.

[0023] The distance that the various species can travel before they areannihilated depends upon their lifetimes, the flow velocity, and theintensity of photo-assist produced by photo energy source 7. The degreeof photo-assist and the flow velocity of the plasma feed gases throughinjector port 9 are controlled so as to maintain and control theconcentration of desired active species at a given distance downstreamof the remote plasma generation region 8, such as at the interactionregion of the processing chamber 12 for desired active species, and at apoint in the transparent conduit 10 prior to the interaction region forany undesired active species, which will depend upon the particularfabrication technique being conducted in processing chamber 12.

[0024] If desired, a non-plasma parent gas, carrier gas, secondaryprecursor gas, or other gas or gas mixture (collectively referred toherein as “non-plasma gas”) may be transferred through non-plasma gasinjector port 15 to interact with the activated plasma species inprocessing chamber 12. Optionally, the non-plasma gas may be mixed withthe active species in a premix chamber (not shown) prior to enteringprocessing chamber 12, or they may be mixed in showerhead 13.

[0025] The photo-assisted apparatus can be employed in anyplasma-enhanced processing system where remote plasma generation isused. The preferred applications of the apparatus of the inventioninclude chemical vapor deposition of, for example, thin films of Ti orWN_(X). When operated for RPECVD, the flux of activated gas speciespartially dissociates and activates (in the gas phase) a non-plasma gasin processing chamber 12. The flux of the activated gas species reactsand orders the activated non-plasma gas species onto the substrate 14within processing chamber 12 of the remote plasma enhanced chemicalvapor deposition reactor system as depicted in FIG. 1.

[0026] Deposition processes typically take place in a cold wall vacuumprocessing chamber in which pressure has been reduced to between 0.1 and100 torr, preferably a pressure of about 0.5 torr. A wafer 14, e.g., onwhich the deposition will be performed, is mounted on a chuck 16, whichmay be heated (if desired) to a temperature within a range of 200°-600°C. by a heat lamp array (not shown). A non-plasma gas enters bubblerapparatus 17. A non-plasma gas flow rate of about 100 sccm is maintainedthrough bubbler apparatus 17 during the deposition process. Othertechniques for vaporizing a semivolatile compound are also known in theart and may be used in place of bubbler apparatus 17.

[0027] The activated species, and non-plasma gas, are ducted to a showerhead 13, and non-plasma gas injector 15, respectively, from which theyenter the processing chamber 12. Relatively uncontaminated materialdeposits on the surface of the wafer. It is hypothesized that as soon asthe mixing of the activated species and the non-plasma gas has occurred,the activated species begin to dissociate the molecules of thenon-plasma gas to form precursor molecules. Thus, the non-plasma gas andthe activated species are mixed, preferably, in the processing chamber12, or just prior to being ducted into the processing chamber 12 in apremix chamber (not shown), or in showerhead 13. Reaction products andnon-plasma gas species are then withdrawn from the chamber 12 via anexhaust manifold. Incorporated in the exhaust manifold are a pressuresensor 23, a pressure switch 24, a vacuum valve 25, a pressure controlvalve 26, and a blower 27. A particulate filter filters out solidreactants before the exhaust is vented to the atmosphere.

[0028] According to a preferred embodiment, at least a portion of thewall of processing chamber 12 comprises a transparent window 19. Window19 may be made of quartz, sapphire, clear polymeric material, or othertransparent materials or combinations thereof. In this embodiment, aphoto energy source 20 is juxtaposed outside transparent wall 19 toassist in maintaining the activation energy of the active species insideprocessing chamber 12.

[0029] As indicated above, the photo-assisted remote plasma reactorapparatus of the invention is capable of performing any plasma-enhancedprocess in which a remote plasma is desired, including, for example,annealing, low temperature chemical vapor deposition, nitridation,passivation, low temperature epitaxial growth, surface cleaning,anisotropic etching, and high density plasma (HDP) processing.

[0030] Annealing processes utilizing the apparatus can be used for thehealing of dielectrics such as Ta₂O₅, Si₃N₄, Al₂O₃, Zr₂O₃, SiO₂,SiO_(x)N_(y), as well as many others. In such a method, a substrate witha dielectric deposited in accordance with the invention is annealed inan environment containing one or more of the following: O₃, O₂, N₂O, NO,and N₂. Theses gases are flowed through the photo-assisted remote plasmaunit to create active species. Annealing the materials in such anenvironment can remove contamination from the deposited film and reduceoxygen vacancies in such a film, which reduces leakage and improves theintegrity of the film.

[0031] The annealing process of the invention can be utilized withdielectrics formed on a wafer by any conventional means. Chemical vapordeposition (CVD) or physical vapor deposition (PVD) depositiontechniques are appropriate for forming the dielectric layer, as isgrowing a dielectric from the substrate. The dielectric layer can alsobe deposited by utilizing the enhanced plasma deposition techniquesdescribed above. Additionally, the deposition can be accomplished in thesame processing chamber as the annealing procedure, or in a differentlocation.

[0032] An example of the annealing-healing process using the apparatusutilizes O₂ and N₂ gases. The O₂ concentration can be from about 5% upto about 95%. The flow rate for these gases can be from about 100 sccmto about 15,000 sccm. The anneal temperature can be from about 300 toabout 750° C. and the anneal time can be from about 30 to about 600 sec.During this process, the remote plasma unit 8 power is from about 600 toabout 3000 W, the power to the energy source 7, here UV lamps can beused, for the species in transit through the conduit 10 can be fromabout 500 to about 4000 W. At the processing chamber 11 the energysource can be about 500 to about 4000 W, again UV lamps will suffice.Annealing the dielectric material under such conditions results in thehealing properties discussed above.

[0033] Another example of the annealing-healing process using theapparatus utilizes O₃, O₂, and N₂ gases. The concentration of O₃ can befrom about 5% to about 50% and the concentration of O₂ can be from about10% to about 90%. The N₂ concentration can be from about 5% to about85%. The gas flow rate can be from about 100 sccm to about 20,000 sccm.The material can be annealed at temperatures from about 300 to about750° C. for about 30 to about 600 sec. The power use for the energysources at the remote generator 8, the conduit 7 and the chamber 11 aresimilar to or the same as those discussed above in the precedingexample. Again, the annealing process under the above conditions resultsin reduction of oxygen vacancies, thereby reducing leakage and improvingfilm dielectric film integrity.

[0034] Annealing processes utilizing the apparatus can also be used tomodify the surface characteristics of a dielectric material deposited inaccordance with the invention. The top 10-35 Å of a dielectric film,such as SiO₂ of about 35 to 110 Å in thickness, can be changed to beSiO_(x)N_(y), where x is 1.6 to 1.95 and y is 0.05 to 0.40. The topsurface of a deposited dielectric may be desired to be altered to makethe dielectric more resistant to dopant diffusion. This resistanceimproves device characteristics in devices such as DRAM field effecttransistors, for example. A dielectric operating as a gate oxide in aFET, annealed by this process, will help maintain the necessaryproportions of dopant concentrations and channel properties in thetransistor, thereby maintaining proper transistor functioning. Thisannealing process is especially helpful in preventing the migration ofboron ions.

[0035] An example of the annealing process to modify dielectric surfacestructure using the apparatus utilizes N₂ and H₂ gases. Theconcentration of N₂ can be from about 10% to about 90% and theconcentration of H₂ gas can be from about 10% to about 90%. The totalflow rate for the gases can be from about 100 sccm to about 20,000 sccm.The dielectric film is annealed at a temperature from about 300 to 750°C. for about 30 to 600 sec. In the remote plasma unit 8 the energyprovided can be about 600 to about 3,000 W. The energy at thetransparent conduit 7 can be from about 500 to about 4,000 W and theenergy at the processing chamber 11 can be from about 500 to about 4,000W. Use of the apparatus to modify a dielectric under theses conditionswill result in the improved device characteristics discussed above.

[0036] Another example of the annealing process to modify dielectricsurface structure using the apparatus utilizes NH₃ and Ar gases. Theconcentration of NH₃ can be from about 10% to about 90% and theconcentration of Ar gas can be from about 10% to about 90%. The totalflow rate for the gases can be from about 100 sccm to about 20,000 sccm.The dielectric film is annealed at a temperature from about 300 to 750°C. for about 30 to 600 sec. In the remote plasma unit 8 the energyprovided can be about 600 to about 3,000 W. The energy at thetransparent conduit 7 can be from about 500 to about 4,000 W and theenergy at the processing chamber 11 can be from about 500 to about 4,000W. Use of the apparatus to modify a dielectric under theses conditionswill similarly result in the improved device characteristics discussedabove.

[0037] A preferred low temperature chemical vapor deposition applicationis the deposition of WN_(X). Nitrogen and hydrogen are passed throughand activated in remote plasma generation region 8 using about 800-2000W of microwave power. The active species then flows through thetransparent conduit 10, with UV photo assist, to processing chamber 12,where WF₆ is then added to the processing chamber through the non-plasmagas injector port 15. The result is deposition of tungsten nitride thinfilm on substrate 14.

[0038] An additional preferred chemical vapor deposition process is thedeposition of titanium. Hydrogen is passed through remote plasmageneration region 8 and activated by microwave, RF or other suitablepower source. Hydrogen plasma then flows through transparent conduit 10,with photo assist, to processing chamber 12 where TiCl₄ is added throughthe non-plasma gas injector port 15. The result is deposition of a thinTi film on substrate 14.

[0039] A low temperature epitaxial layer can be grown using argon passedthrough remote plasma generation region 8, along with silane andhydrogen being passed through the non-plasma gas injector port 15. Thepressure in the processing chamber could be 1×10⁻³ Torr at 750° C.Again, a photo energy source, preferably UV lamps, sustains theactivation level of the Ar gas as it is conveyed through a transparentconduit 10 to the processing chamber 12.

[0040] Another typical low temperature chemical vapor deposition processis oxide planarization technology for deposition of a planarized oxidelayer on a surface having an uneven surface, e.g., hills and valleys. Inthis process, oxygen and argon are activated in remote plasma generationregion 8, and transferred to processing chamber 12 with photo assist.Silane is added through the non-plasma gas injector port 15 toprocessing chamber 12. A large RF signal is applied to substrate 14 fora short planarization time which effects the actual planarization.

[0041] One possible anisotropic etch process is the etching of silicondioxide with selectivity to silicon. This is accomplished by passingC₃F₈ gas through remote plasma generation region 8 using about 60 wattsof microwave power as well as about 200 volts peak to peak RF at 800 kHzand 5×10⁻⁴ Torr. Another possible anisotropic etch process could be theetching of silicon. This is accomplished by passing SF₆ and argon gasthrough remote plasma generation region 8 and using about 600 watts ofmicrowave power as well as about 100 volts peak to peak RF at 13.56 MHzand 3×10⁻⁴ Torr. In each etch process, the transparent conduit 10 andphoto energy source 7 sustains the energy level of the active plasmaspecies for efficient plasma processing in the processing chamber 12.

[0042] The above description illustrates preferred embodiments whichachieve the objects, features and advantages of the present invention.Unless specifically stated otherwise above, the pressure, temperature,and other process parameters, and the power and frequencies used forplasma generation and photo-assisted maintenance of active species, canbe widely varied, so long as photo energy is utilized to help to sustainthe energy of one or more active species as such species are transferredthrough a transparent conduit from a remote plasma generation region toa processing chamber. It is not intended that the present invention belimited to the illustrated embodiments. Any modification of the presentinvention which comes within the spirit and scope of the followingclaims should be considered part of the present invention.

What is claimed as new and desired to be protected by Letters Patent ofthe United States is:
 1. A method of fabricating a semiconductor device,comprising: providing a substrate within an annealing chamber; creatingan activated species in a remote plasma activation region; transferringsaid activated species from said remote plasma activation region througha conduit to said annealing chamber, said conduit provided with a sourceof photo energy, wherein said photo energy maintains the activated stateof said activated species during said transferring; and annealing saidsubstrate within said annealing chamber.
 2. The method of claim 1,wherein a dielectric material layer is provided over said substratelayer.
 3. The method of claim 2, wherein said dielectric material layeris annealed during the act of annealing said substrate.
 4. The method ofclaim 3, wherein said annealing of said dielectric material layer occursin the presence of said activated species.
 5. The method of claim 4,wherein said dielectric material is selected from the group consistingof Ta₂O₅, Si₃N₄, Al₂O₃, Zr₂O₃, SiO₂, and SiO_(x)N_(y).
 6. The method ofclaim 5, wherein said annealing of said dielectric material layerremoves contaminants from said dielectric material and reduces oxygenvacancies in said dielectric material.
 7. The method of claim 6, whereinthe annealing of said dielectric material layer occurs at about 300 toabout 750° C.
 8. The method of claim 7, wherein said activated speciescomprises O₂ and N₂.
 9. The method of claim 8, wherein said activatedspecies is about 5% to about 95% O₂.
 10. The method of claim 9, whereinthe flow rate of said activated species is between about 100 to about15,000 sccm.
 11. The method of claim 10, wherein the anneal time isbetween about 30 to about 600 seconds.
 12. The method of claim 11,wherein the power of said photo energy source at said conduit is betweenabout 500 to about 4,000 W.
 13. The method of claim 8, wherein saidactivated species further comprises O₃.
 14. The method of claim 13,wherein said activated species comprises about 5% to about 50% O₃, about10% to about 90% O₂, and about 5% to about 85% N₂.
 15. The method ofclaim 14, wherein the flow rate of said activated species is betweenabout 100 to about 20,000 sccm.
 16. The method of claim 15, wherein theanneal time is between about 30 to about 600 seconds.
 17. The method ofclaim 16, wherein the power of said photo energy source at said conduitis between about 500 to about 4,000 W.
 18. The method of claim 15,wherein said dielectric material is SiO₂.
 19. The method of claim 18,wherein said annealing of said dielectric material layer converts thetop 10 to 35 Å of said dielectric material layer to SiO_(x)N_(y), wherex is 1.6 to 1.95 and y is 0.05 to 0.4.
 20. The method of claim 19,wherein the annealing of said dielectric material layer occurs at about300 to about 750° C.
 21. The method of claim 20, wherein said activatedspecies comprises N₂ and H₂.
 22. The method of claim 21, wherein saidactivated species is about 10% to about 90% N₂ and about 10% to about90% H₂.
 23. The method of claim 22, wherein said flow rate of saidactivated species is between about 100 to about 20,000 sccm.
 24. Themethod of claim 23, wherein the anneal time is between about 30 to about600 seconds.
 25. The method of claim 24, wherein the power of said photoenergy source at said conduit is between about 500 to about 4,000 W. 26.The method of claim 18, wherein said activated species comprises NH₃ andAr.
 27. The method of claim 26, wherein said activated species is about10% to about 90% NH₃ and about 10% to about 90% Ar.
 28. The method ofclaim 27, wherein said flow rate of said activated species is betweenabout 100 to about 20,000 sccm.
 29. The method of claim 28, wherein theanneal time is between about 30 to about 600 seconds.
 30. The method ofclaim 29, wherein the power of said photo energy source at said conduitis between about 500 to about 4,000 W.
 31. The method of claim 4,wherein said dielectric material layer is formed over said substratewithin said annealing chamber and in the presence of a second activatedspecies, prior to said annealing.
 32. The method of claim 4, whereinsaid dielectric material layer is formed over said substrate in achamber remote from said annealing chamber and said substrate istransferred to said annealing chamber subsequently to said forming ofsaid dielectric material layer and prior to said annealing.
 33. Themethod of claim 32, wherein the act of forming said dielectric materiallayer occurs in the presence of a second activated species created insaid remote plasma activation region and transferred to said chamberremote from said annealing chamber.
 34. The method of claim 4, whereinsaid dielectric material layer is grown on said substrate.
 35. Aplasma-enhanced process for fabricating a semiconductor device,comprising: healing a dielectric material, said healing comprising:positioning a substrate comprising a layer of said dielectric materialin a processing chamber; creating an activated species in a plasmadischarge at a remote location from said processing chamber;transferring said activated species from said remote location to saidprocessing chamber through a transfer conduit, said conduit being atleast partially transparent; providing a source of photo energy alongthe transparent portion of said conduit, said photo energy maintainingthe activated state of said activated species during said transfer;admitting said activated species into said processing chamber; andannealing said dielectric material within said processing chamber and inthe presence of said activated species.
 36. A plasma-enhanced processfor fabricating a semiconductor device, comprising: converting the top10 to 35 Å of a layer of SiO₂ to SiO_(x)N_(y), wherein x is 1.6 to 1.95and y is 0.05 to 0.4, wherein said converting comprises: positioning asubstrate comprising said layer of SiO₂ within a processing chamber;creating an activated species in a plasma discharge at a remote locationfrom said processing chamber; transferring said activated species fromsaid remote location to said processing chamber through a transferconduit, said conduit being at least partially transparent; providing asource of photo energy along the transparent portion of said conduit,said photo energy maintaining the activated state of said activatedspecies during said transfer; admitting said activated species into saidprocessing chamber containing said substrate; and annealing said layerof SiO₂ in said processing chamber and in the presence of said activatedspecies.
 37. An apparatus for carrying out remote plasma-enhancedannealing of a dielectric material of a semiconductor substrate,comprising: a substrate processing chamber; a substrate support chuckwithin said processing chamber; a remote plasma activation region; aconduit connecting said remote plasma activation region to saidprocessing chamber, said conduit being at least partially transparent; aphoto energy source to maintain the activated state of a plasma gasactivated in said remote plasma activation region by providing photoenergy to said plasma gas while within said conduit; and an energysource at said processing chamber, said energy source providing energyto anneal said dielectric material of said semiconductor substrate. 38.The apparatus of claim 33, wherein said photo energy source is selectedfrom the group consisting of a laser source and an ultraviolet source.39. The apparatus of claim 33, wherein said conduit is a quartz tube.40. The apparatus of claim 33, wherein said photo energy source providesabout 500 to about 4,000 W of energy.
 41. The apparatus of claim 33,wherein said energy source at said processing chamber provides about 500to about 4,000 W of energy.